| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition and a pattern forming method using the composition which can minimize outgassing from a resist film and prevent formation of blob defects in EUV exposure.SOLUTION: The resist material comprises a polymeric compound as a base resin which shows increase in alkali solubility by an acid and a polymeric compound including a repeating unit derived from styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol as a polymeric additive. A photoresist film formed by using the above resist material can minimize outgassing from the resist film in EUV exposure, can reduce edge roughness (LWR) after development, and can prevent formation of blob defects on the resist film after development as the resist film surface is rendered into hydrophilic. |
