| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing device and a manufacturing method of an epitaxial wafer which can equalize a film thickness of an epitaxial layer on a peripheral part of a semiconductor wafer in a simpler method.SOLUTION: A vapor phase epitaxy device 1 as a manufacturing device of an epitaxial wafer comprises: a susceptor 12 which is arranged in a reaction container 2 and loads a silicon wafer W; a rotation mechanism 14 for horizontally rotating the susceptor 12; and a vertical movement mechanism 15 for moving the susceptor 12 in a vertical direction. When an epitaxial layer is vapor-phase grown on the silicon wafer W, and a crystal orientation of a peripheral part of the silicon wafer W oriented to a gas supply direction (gas supply side 21, gas discharge side 36) is <110> orientation, the susceptor 12 is lowered by the vertical movement mechanism 15 while horizontally rotating the susceptor 12 by the rotation mechanism 14. When a crystal orientation oriented in the gas supply direction is <100> orientation, the susceptor 12 is uplifted. |
