| 摘要 |
A method of crystallising a thin film (220) including the steps of: depositing a thin film (220) on a substrate (210); and exposing the thin film (220) as deposited on the substrate (210) and the substrate (210) to a plasma for a time period of greater than 5 minutes, wherein: the thin film (220) is one of an amorphous magneto optic material, an amorphous electro optic material or a nitride material; a gas (130) is excited with a radio frequency (RF) field to form the plasma; the thin film (220) and the substrate (210) are, in the course of being exposed to the plasma, heated to temperatures of between 400°C and 550°C by the plasma; and the thin film (220) is at least partially crystallised by the plasma. |
