发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND STORAGE MEDIUM |
摘要 |
In order to obtain a semiconductor device having an embedded electrode with low cost and high reliability, a semiconductor device manufacturing method includes forming a first film made of a metal oxide within an opening which is formed in an insulating film formed on a surface of a substrate; performing a hydrogen radical treatment by irradiating atomic hydrogen to the first film; forming a second film made of a metal within the opening after the performing of the hydrogen radical treatment; and forming an electrode made of a metal within the opening after the forming of the second film. |
申请公布号 |
US2014103529(A1) |
申请公布日期 |
2014.04.17 |
申请号 |
US201314105514 |
申请日期 |
2013.12.13 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MATSUMOTO KENJI;GOMI ATSUSHI;HATANO TATSUO;HAMADA TATSUFUMI |
分类号 |
H01L21/768;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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