发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND STORAGE MEDIUM
摘要 In order to obtain a semiconductor device having an embedded electrode with low cost and high reliability, a semiconductor device manufacturing method includes forming a first film made of a metal oxide within an opening which is formed in an insulating film formed on a surface of a substrate; performing a hydrogen radical treatment by irradiating atomic hydrogen to the first film; forming a second film made of a metal within the opening after the performing of the hydrogen radical treatment; and forming an electrode made of a metal within the opening after the forming of the second film.
申请公布号 US2014103529(A1) 申请公布日期 2014.04.17
申请号 US201314105514 申请日期 2013.12.13
申请人 TOKYO ELECTRON LIMITED 发明人 MATSUMOTO KENJI;GOMI ATSUSHI;HATANO TATSUO;HAMADA TATSUFUMI
分类号 H01L21/768;H01L23/532 主分类号 H01L21/768
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