| 摘要 |
Transistors including oxide spacers and methods of forming the same. Embodiments include planar FETs including a gate on a semiconductor substrate, oxide spacers on the gate sidewalls, and source or drain regions at least partially in the substrate offset from the gate by the oxide spacers. Other embodiments include finFETs including a fin on an insulator layer, a gate formed over the fin, a first source or drain region on a first end of the fin, a second source or drain region on a second end of the fin, and oxide spacers on the gate sidewalls separating the first source or drain region and the second source or drain from the gate. Embodiments further include methods of forming transistors with oxide spacers including forming a transistor including sacrificial spacers, removing the sacrificial spacers to form recess regions, and forming oxide spacers in the recess regions. |
