发明名称 |
Lightly Doped Source/Drain Last Method For Dual-EPI Integration |
摘要 |
An integrated circuit device and method for fabricating the integrated circuit device is disclosed. The method involves providing a substrate; forming a gate structure over the substrate; forming an epitaxial layer in a source and drain region of the substrate that is interposed by the gate structure; and after forming the epitaxial layer, forming a lightly doped source and drain (LDD) feature in the source and drain region. |
申请公布号 |
US2014103454(A1) |
申请公布日期 |
2014.04.17 |
申请号 |
US201314143556 |
申请日期 |
2013.12.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
FUNG KA-HING;WANG HAITING;TSAI HAN-TING |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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