GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light-emitting element which relaxes strain applied to a luminescent layer and has high luminous efficiency; and provide a manufacturing method of the group III nitride semiconductor light-emitting element.SOLUTION: A light-emitting element 100 comprises: a substrate 110; a low-temperature buffer layer 120; an n-type contact layer 130; a first ESD layer 140; a second ESD layer 150; an n-side superlattice layer 160; a luminescent layer 170; a p-side superlattice layer 180; a p-type contact layer 190; an n-electrode N1; a p-electrode P1; and a passivation film F1. The second ESD layer 150 includes pits X having an average pit diameter D. The average pit diameter D is within a range of 500 Å≤D≤3000 Å. A film thickness Y of an InGaN layer 161 in the n-side superlattice layer 160 fulfills the following expression: -0.029×D+82.8≤Y≤-0.029×D+102.8.