发明名称 PHOTOELECTRIC CONVERSION ELEMENT AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a photoelectric conversion element having high conversion efficiency, capable of reducing the thickness, and capable of being manufactured at low cost.SOLUTION: The photoelectric conversion element includes: a semiconductor substrate 1 of a first conductivity type; a first amorphous film 3 of the first conductivity type provided on the entire one surface of the semiconductor substrate 1; a first conductive oxide layer 4 provided on the first amorphous film 3; a second amorphous film 6 of the first conductivity type provided at a part of the other surface of the semiconductor substrate 1; a second conductive oxide layer 7 provided on the second amorphous film 6; a third amorphous film 9 of a second conductivity type provided at the other part of the other surface of the semiconductor substrate 1; and a third conductive oxide layer 10 provided on the third amorphous film 9. The conductivity of the first conductive oxide layer 4 is lower than that of the second conductive oxide layer 7 and the third conductive oxide layer 10, and the transmissivity of the first conductive oxide layer 4 is higher than that of the second conductive oxide layer 7 and the third conductive oxide layer 10.
申请公布号 JP2014067888(A) 申请公布日期 2014.04.17
申请号 JP20120212547 申请日期 2012.09.26
申请人 SHARP CORP 发明人 SAKAI TOSHIHIKO;KIMOTO KENJI;KOIDE NAOKI;YAMAMOTO YOSHITAKA
分类号 H01L31/06 主分类号 H01L31/06
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