发明名称 |
SEMICONDUCTOR DEVICE HAVING ESD PROTECTION STRUCTURE AND ASSOCIATED METHOD FOR MANUFACTURING |
摘要 |
A semiconductor device having an ESD protection structure and a method for forming the semiconductor device. The semiconductor device further includes a semiconductor transistor formed in an active cell area of a substrate. The ESD protection structure is formed atop a termination area of the substrate and is of solid closed shape. The ESD protection structure includes a central doped zone of a first conductivity type and a plurality of second-conductivity-type doped zones and first-conductivity-type doped zones alternately disposed surrounding the central doped zone. The central doped zone occupies substantially the entire portion of the ESD protection structure that is overlapped by a gate metal pad, and is electrically coupled to the gate metal pad. The outmost first-conductivity-type doped zone is electrically coupled to a source metal. The ESD protection structure features a reduced resistance and an improved current uniformity and provides enhanced ESD protection to the transistor. |
申请公布号 |
US2014103416(A1) |
申请公布日期 |
2014.04.17 |
申请号 |
US201314051342 |
申请日期 |
2013.10.10 |
申请人 |
CHENGDU MONOLITHIC POWER SYSTEMS CO., LTD. |
发明人 |
MA RONGYAO;LI TIESHENG;WANG HUAIFENG;LI HENG;YIN FAYOU |
分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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