发明名称 METHODS AND APPARATUS FOR FINFET SRAM CELLS
摘要 Methods and apparatus for providing finFET SRAM cells. An SRAM cell structure is provided including a central N-well region and a first and a second P-well region on opposing sides of the central N-well region, having an area ratio of the N-well region to the P-well regions between 80-120%, the SRAM cell structure further includes at least one p-type transistor formed in the N-well region and having a gate electrode comprising a gate and a gate dielectric over a p-type transistor active area in the N-well region; and at least one n-type transistor formed in each of the first and second P-well regions and each n-type transistor having a gate electrode comprising a gate and a gate dielectric over an n-type transistor active area in the respective P-well region. Methods for operating the SRAM cell structures are disclosed.
申请公布号 KR101385719(B1) 申请公布日期 2014.04.17
申请号 KR20120012398 申请日期 2012.02.07
申请人 发明人
分类号 H01L21/8244;H01L27/11 主分类号 H01L21/8244
代理机构 代理人
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