发明名称 RESIST COMPOSITION AND PATTERNING PROCESS
摘要 A resist composition is provided comprising (A) an additive polymer of acyl-protected hexafluoroalcohol structure, (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, the base polymer becoming soluble in alkaline developer under the action of acid, (C) a photoacid generator, and (D) an organic solvent. The additive polymer is transparent to radiation of wavelength up to 200 nm, and its properties can be tailored by a choice of the polymer structure.
申请公布号 KR101386745(B1) 申请公布日期 2014.04.17
申请号 KR20090117737 申请日期 2009.12.01
申请人 发明人
分类号 G03F7/004 主分类号 G03F7/004
代理机构 代理人
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