发明名称 Field plate assisted resistance reduction in a semiconductor device
摘要 <p>Embodiments of a semiconductor device, a circuit including a semiconductor device and a driver circuit, and a method for operating a semiconductor device are described. In one embodiment, a semiconductor device includes a substrate, a source region, a drain region, and a drain extension region formed in the substrate, and an insulation layer adjacent to the drain extension region. A gate layer and a field plate are formed one of within and on the insulation layer. The field plate is located adjacent to the drain extension region and is electrically insulated from the gate layer and the source region such that a voltage can be applied to the field plate independent from voltages applied to the gate layer and the source region. Other embodiments are also described.</p>
申请公布号 EP2720270(A1) 申请公布日期 2014.04.16
申请号 EP20130185012 申请日期 2013.09.18
申请人 NXP B.V. 发明人 HERINGA, ANCO;KOOPS, GERHARD;BOKSTEEN, BONI, KOFI;FERRARA, ALESSANDRO
分类号 H01L29/40;H01L29/78 主分类号 H01L29/40
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