| 摘要 |
<p>In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element (50) having a reflective surface (60) with a multilayer system (51) and in the case of which the reflective surface (60) has a protective layer system (59) with an uppermost layer (56) composed of silicon carbide or ruthenium, the protective layer system (59) having a thickness of between 5 nm and 25 nm.</p> |
