| 摘要 |
A method of manufacturing a tandem thin-film solar cell is provided, the solar cell including a plurality of photoelectric conversion units (3, 4) stacked on a substrate (1), the photoelectric conversion units each having a p-type layer, an i-type photoelectric conversion layer and an n-type layer deposited in this order from a light-incident side of the solar cell, and at least a rear unit (4) among the photoelectric conversion units that is furthest from the light-incident side being a crystalline unit including a crystalline i-type photoelectric conversion layer (4i). The manufacturing method includes the steps of forming at least one (3) of the units on the substrate (1) by plasma CVD and immediately thereafter forming an i-type boundary layer (5i) to a thickness of at most 5 nm by plasma CVD, and thereafter removing the substrate (1) into the atmosphere to expose a surface of the i-type boundary layer (5i) to the atmosphere and then forming a crystalline unit (4) on the i-type boundary layer (5i) by plasma CVD. |
