发明名称 |
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME |
摘要 |
<p>The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same.</p> |
申请公布号 |
EP2395133(A4) |
申请公布日期 |
2014.04.16 |
申请号 |
EP20100735972 |
申请日期 |
2010.01.29 |
申请人 |
NIPPON STEEL & SUMITOMO METAL CORPORATION |
发明人 |
AIGO, TAKASHI;TSUGE, HIROSHI;HOSHINO, TAIZO;FUJIMOTO, TATSUO;KATSUNO, MASAKAZU;NAKABAYASHI, MASASHI;YASHIRO, HIROKATSU |
分类号 |
C30B29/36;C23C16/32;C23C16/42;C30B25/18;C30B25/20;H01L21/205 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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