发明名称 INFRARED IMAGING DEVICE INTEGRATING AN IR UP-CONVERSION DEVICE WITH A CMOS IMAGE SENSOR
摘要 <p>Imaging devices include an IR up-conversion device on a CMOS imaging sensor (CIS) where the up-conversion device comprises a transparent multilayer stack. The multilayer stack includes an IR sensitizing layer and a light emitting layer situated between a transparent anode and a transparent cathode. In embodiments of the invention, the multilayer stack is formed on a transparent support that is coupled to the CIS by a mechanical fastener or an adhesive or by lamination. In another embodiment of the invention, the CIS functions as a supporting substrate for formation of the multilayer stack.</p>
申请公布号 EP2718974(A2) 申请公布日期 2014.04.16
申请号 EP20120797523 申请日期 2012.06.06
申请人 UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.;NANOHOLDINGS, LLC 发明人 SO, FRANKY;KIM, DO, YOUNG;PRADHAN, BHABENDRA, K.
分类号 H01L27/146;H01L27/14;H01L27/28;H01L51/44;H01L51/52 主分类号 H01L27/146
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