发明名称 |
INFRARED IMAGING DEVICE INTEGRATING AN IR UP-CONVERSION DEVICE WITH A CMOS IMAGE SENSOR |
摘要 |
<p>Imaging devices include an IR up-conversion device on a CMOS imaging sensor (CIS) where the up-conversion device comprises a transparent multilayer stack. The multilayer stack includes an IR sensitizing layer and a light emitting layer situated between a transparent anode and a transparent cathode. In embodiments of the invention, the multilayer stack is formed on a transparent support that is coupled to the CIS by a mechanical fastener or an adhesive or by lamination. In another embodiment of the invention, the CIS functions as a supporting substrate for formation of the multilayer stack.</p> |
申请公布号 |
EP2718974(A2) |
申请公布日期 |
2014.04.16 |
申请号 |
EP20120797523 |
申请日期 |
2012.06.06 |
申请人 |
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.;NANOHOLDINGS, LLC |
发明人 |
SO, FRANKY;KIM, DO, YOUNG;PRADHAN, BHABENDRA, K. |
分类号 |
H01L27/146;H01L27/14;H01L27/28;H01L51/44;H01L51/52 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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