| 摘要 |
The present invention relates to a method for forming a gallium nitride-based semiconductor substrate and a substrate structure for the gallium nitride-based semiconductor substrate. The present invention relates to a method for forming a gallium nitride-based semiconductor substrate which obtains a high quality gallium nitride (GaN) semiconductor substrate by forming a nitride metal layer of a nanocolumn shape, forming a seed layer grown at low temperatures, and forming a high temperature gallium nitride-based semiconductor layer, and a substrate structure for the gallium nitride-based semiconductor substrate. |
