GRAPHENE FIELD EFFECT TRANSISTOR WITH DIELECTRICS AND GATE ELECTRODES HAVING STABLE BEHAVIORS DESPITE HIGH STRAINS, AND MANUFACTURING METHOD OF THE SAME

摘要

The present invention relates to a graphene field effect transistor with dielectrics and gate electrodes having stable behaviors despite high strains and a method for manufacturing the same. According to an embodiment of the present invention, the method of manufacturing a graphene field effect transistor with dielectrics and gate electrodes having stable behaviors despite high strains includes a step of preparing a monolithically patterned graphene layer; a step of forming an insulating layer; and a step of forming a gate electrode. [Reference numerals] (AA) Patterned graphene; (BB) Rubber; (CC) Aerosol jet printing; (DD) Nozzle; (EE) Ion gel printing; (FF) Ethanol; (GG,HH) Stretch(transformation); (II) PEDOT:PSS printing; (JJ) Hexane evaporation