发明名称 |
Enhanced transistor performance of N-channel transistors by using an additional layer above a dual stress liner in a semiconductor device |
摘要 |
By forming an additional dielectric material, such as silicon nitride, after patterning dielectric liners of different intrinsic stress, a significant increase of performance of N-channel transistors may be obtained while substantially not contributing to a performance loss of the P-channel transistor. |
申请公布号 |
US8697584(B2) |
申请公布日期 |
2014.04.15 |
申请号 |
US20080017175 |
申请日期 |
2008.01.21 |
申请人 |
RICHTER RALF;WEI ANDY;BOSCHKE ROMAN;GLOBALFOUNDRIES INC. |
发明人 |
RICHTER RALF;WEI ANDY;BOSCHKE ROMAN |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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