| 摘要 |
PURPOSE: A method for manufacturing a thin film transistor with an LDD structure is provided to form the LDD structure without an additional process by forming an LDD region using a gate insulation layer as a doping mask. CONSTITUTION: An amorphous silicon active layer, a gate insulation layer (30), and a gate metal layer are successively formed on a substrate (10). A gate electrode (42) is formed on the gate metal layer by a first etching process. A protrusive region (32) is formed on both sides of the gate insulation layer and is more protrusive than the gate electrode. A crystallization induction metal layer (52) is deposited on the surface of the amorphous silicon active layer which is exposed to the outside. A polycrystalline silicon layer (22) is formed by a crystallization heat treatment. An LDD region is formed by using the protrusive region of the gate insulation layer as a doping mask. |
