半导体记忆体装置及其制法,申请号TW097104833-传众专利搜索

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发明名称	半导体记忆体装置及其制法
摘要
申请公布号	TWI434401	申请公布日期	2014.04.11
申请号	TW097104833	申请日期	2008.02.12
申请人	富士通微电子股份有限公司日本	发明人	安田真
分类号	H01L27/11;H01L21/8244	主分类号	H01L27/11
代理机构		代理人	恽轶群台北市松山区南京东路3段248号7楼;陈文郎台北市松山区南京东路3段248号7楼
主权项
地址	日本

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