发明名称 VAPOR DEPOSITION APPARATUS
摘要 Provided is a compact vapor deposition apparatus having high productivity. A vapor deposition apparatus (1) of the present invention supplies a starting material gas to a substrate (5) disposed in a chamber (2), which can be separated into upper and lower sections, i.e., a chamber main body (3) and a chamber cover (4), and the vapor deposition apparatus (1) grows a thin film on the substrate (5). The vapor deposition apparatus (1) is characterized in having: a susceptor (7), which has a disc-like shape, and which holds the substrate (5) by being removably disposed on the chamber main body (3) side; a susceptor cover (9) that is disposed on the susceptor (7) such that the susceptor (7) portions, except a substrate holding portion, are covered with the susceptor cover; a ceiling plate (11) that forms a flow channel for the starting material gas by being disposed to face the susceptor (7) at a predetermined interval between the susceptor and the ceiling plate; and a temporarily placing apparatus (21) that temporarily places, in a space above the chamber main body (3), at least one of the susceptor (7), the susceptor cover (9), and the ceiling plate (11), said space being formed when the chamber (2) is separated.
申请公布号 WO2014054501(A1) 申请公布日期 2014.04.10
申请号 WO2013JP76091 申请日期 2013.09.26
申请人 TAIYO NIPPON SANSO CORPORATION;TN EMC LTD. 发明人 YAMAGUCHI, AKIRA;UBUKATA, AKINORI;YAMAOKA, YUYA;UCHIYAMA, KOSUKE
分类号 H01L21/205;C23C16/44 主分类号 H01L21/205
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