发明名称 |
SEMICONDUCTOR DEVICE, HIGH-FREQUENCY TRANSMISSION DEVICE, AND SEMICONDUCTOR MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing substrate loss when a high-frequency signal is passed through a capacitor, a high-frequency transmission device, and a semiconductor manufacturing method.SOLUTION: A semiconductor device 1 includes: a silicon substrate 3; a shield 4 disposed above the silicon substrate 3 and having a conductive material; capacitive electrodes 5 and 6 disposed above the shield 4; and at least one columnar member 7 interposed between the shield 4 and the silicon substrate 3, and having a conductive material. |
申请公布号 |
JP2014063991(A) |
申请公布日期 |
2014.04.10 |
申请号 |
JP20130165361 |
申请日期 |
2013.08.08 |
申请人 |
TOSHIBA CORP |
发明人 |
KAWAI SHUSUKE;MITOMO TOSHIYA;SAEGUSA SHIGETO;ITAKURA TETSURO |
分类号 |
H01L21/822;H01L21/3205;H01L21/768;H01L23/522;H01L27/04 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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