发明名称 SEMICONDUCTOR DEVICE, HIGH-FREQUENCY TRANSMISSION DEVICE, AND SEMICONDUCTOR MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing substrate loss when a high-frequency signal is passed through a capacitor, a high-frequency transmission device, and a semiconductor manufacturing method.SOLUTION: A semiconductor device 1 includes: a silicon substrate 3; a shield 4 disposed above the silicon substrate 3 and having a conductive material; capacitive electrodes 5 and 6 disposed above the shield 4; and at least one columnar member 7 interposed between the shield 4 and the silicon substrate 3, and having a conductive material.
申请公布号 JP2014063991(A) 申请公布日期 2014.04.10
申请号 JP20130165361 申请日期 2013.08.08
申请人 TOSHIBA CORP 发明人 KAWAI SHUSUKE;MITOMO TOSHIYA;SAEGUSA SHIGETO;ITAKURA TETSURO
分类号 H01L21/822;H01L21/3205;H01L21/768;H01L23/522;H01L27/04 主分类号 H01L21/822
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