| 摘要 |
PROBLEM TO BE SOLVED: To implement a mechanism for enhancing the performance of a transistor without having any substantial impact on the diode characteristics, by forming the substrate diode of an SOI device according to a manufacturing flow designed appropriately.SOLUTION: Apertures 311A, 311B of each substrate diode are formed after formation of a corresponding sidewall spacer structure used for defining a drain and source region 337. Consequently, dopant is diffused significantly in the side direction. Process margin is thereby given sufficiently between subsequent silicidation sequence based on the spacer removal of transistor devices 330A, 330B. In addition to or in place thereof, an offset spacer 360S is formed without having any substantial impact on the structure of each transistor device 330A, 330B. |
