| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element in which the bias voltage dependency of magnetoresistance ratio is steep.SOLUTION: A magnetoresistance effect element includes a ferromagnetic layer 103 having variable magnetization direction, a ferromagnetic layer 105 having an invariable magnetization direction, and a tunnel barrier layer 104 placed between the ferromagnetic layer 103 and the ferromagnetic layer 105. Energy barrier of the ferromagnetic layer 103 for the tunnel barrier layer 104 is higher than the energy barrier of the ferromagnetic layer 105 for the tunnel barrier layer 104. The ferromagnetic layer 105 contains a main component including at least one of Fe, Co, Ni, and additive elements selected from Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W. A positive bias is applied to the ferromagnetic layer 105 when writing from parallel state to anti-parallel state. |
