发明名称 |
COMBINED ETCH AND PASSIVATION OF SILICON SOLAR CELLS |
摘要 |
<p>A process for passivating and etching a texture on a surface of a substrate, the process comprising the steps of inserting a substrate in a reactor chamber; heating the reactor chamber and substrate; etching the substrate with an fluoride-containing etchant gas inside the chamber; and oxidising the etched surface of the substrate prior to exposing the fluorinated substrate to air or any other reactive atmosphere; wherein oxidisation of the etched surface of the substrate generates a strongly passivated and stable surface texture.</p> |
申请公布号 |
WO2014053484(A1) |
申请公布日期 |
2014.04.10 |
申请号 |
WO2013EP70443 |
申请日期 |
2013.10.01 |
申请人 |
ULTRA HIGH VACUUM SOLUTIONS LTD. T/A NINES ENGINEERING |
发明人 |
CLOCHARD, LAURENT |
分类号 |
H01L21/67;H01L31/0236;H01L31/18 |
主分类号 |
H01L21/67 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|