发明名称 COMBINED ETCH AND PASSIVATION OF SILICON SOLAR CELLS
摘要 <p>A process for passivating and etching a texture on a surface of a substrate, the process comprising the steps of inserting a substrate in a reactor chamber; heating the reactor chamber and substrate; etching the substrate with an fluoride-containing etchant gas inside the chamber; and oxidising the etched surface of the substrate prior to exposing the fluorinated substrate to air or any other reactive atmosphere; wherein oxidisation of the etched surface of the substrate generates a strongly passivated and stable surface texture.</p>
申请公布号 WO2014053484(A1) 申请公布日期 2014.04.10
申请号 WO2013EP70443 申请日期 2013.10.01
申请人 ULTRA HIGH VACUUM SOLUTIONS LTD. T/A NINES ENGINEERING 发明人 CLOCHARD, LAURENT
分类号 H01L21/67;H01L31/0236;H01L31/18 主分类号 H01L21/67
代理机构 代理人
主权项
地址