NITRIDE SEMICONDUCTOR STRUCTURE, LAMINATE STRUCTURE, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

A nitride semiconductor structure having an m surface as a primary surface, wherein the structure is provided with a plurality of crystal-growth seed regions (130) comprising a nitride semiconductor extending at an angle in a range of 0-10° in relation to an a-axis, and a horizontal-direction growth region (320b) comprising a nitride semiconductor spread in the c-axis direction from each of the plurality of crystal-growth seed regions, the interval (S width) between adjacent crystal-growth seed regions being at least 20 µm.