| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of stabilizing a withstand voltage characteristic and improving a withstand voltage.SOLUTION: In a power semiconductor device 10 according to an embodiment of the invention, an n-type semiconductor substrate 14 is provided with a main cell portion 12 having a plurality of power semiconductor elements and a terminal portion 13 surrounding the main cell portion 12. The terminal portion 13 comprises a plurality of p-type guard ring layers 25, insulator films 24, and field relaxation layers 37. The plurality of guard ring layers 25 are arranged on the upper surface of the semiconductor substrate 14 so as to be separated from each other. Each of the plurality of guard ring layers 25 is in a ring shape, surrounding the main cell portion 12. Each insulator film 24 is formed on the semiconductor substrate 14, between the guard ring layers 25, and between a base layer 19 that is provided in the main cell portion 12 and the guard ring layer 25. The field relaxation layers 37 including p-type impurities are arranged on each of the insulator films 24. |
