| 摘要 |
A semiconductor device (201) is provided with a thin film transistor (101) that has an oxide semiconductor layer (5). A source electrode (7) and a drain electrode (9) of the thin film transistor (101) respectively comprise: main layers (7a, 9a) which contain a first metal; lower layers (7c, 9c) which are arranged on the substrate side of the main layers and sequentially comprise, in the following order from the main layer side, lower metal nitride layers that are formed of a nitride of a second metal and lower metal layers that are formed of the second metal; and upper layers (7b, 9b) which are arranged on a side of the main layers, said side being on the reverse side of the substrate side, and which sequentially comprise, in the following order from the main layer side, upper metal nitride layers that are formed of the nitride of the second metal and upper metal layers that are formed of the second metal. The first metal is aluminum or copper, and the second metal is titanium or molybdenum. |
