Semiconductor device with an oxide solder flow prevention area on a substrate and corresponding manufacturing method

摘要

In a semiconductor device where a metal circuit layer (2) is disposed over a main planar surface of an insulating substrate (1), a semiconductor chip (7) is connected by way of a solder (6) to the metal circuit layer (2), and a metal terminal (10) is ultrasonically connected to the metal circuit layer (2), in which a solder flow prevention area (4a, 4b, 12a, 12b) comprising an oxide material is linearly formed between the semiconductor chip (7) and the ultrasonic metal bonding region (53) over the metal circuit layer (2). The oxide solder flow prevention area (4a, 4b, 12a, 12b) may be formed by local laser irradiation of the metal circuit layer (2). A mark (5) may be formed to the metal circuit layer (2), using an identical laser irradiation device.