<p>An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.</p>
申请公布号
EP2396449(A4)
申请公布日期
2014.04.09
申请号
EP20100740845
申请日期
2010.02.12
申请人
GALLIUM ENTERPRISES PTY LTD
发明人
REYNOLDS, GUY JAMES;MARTIN, CONOR NICHOLAS;GLOWACKI, PIOTR;WINTREBERT EP FOUQUET, MARIE-PIERRE FRANCOISE;BARIK, SATYANARAYAN;CHEN, PATRICK PO-TSANG