| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor epitaxial substrate which is quick in recovery after high frequency signal interruption, and which is excellent in element separation characteristics. SOLUTION: A semiconductor epitaxial substrate comprises: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer. In the semiconductor epitaxial substrate, a boundary face between the AlN layer and the nitride semiconductor layer has larger irregularity than a boundary face between the single crystal substrate and the AlN layer. COPYRIGHT: (C)2013,JPO&INPIT |
