发明名称 INTEGRATED CIRCUITS COMPRISING INSULATION MATERIAL AND USE OF SAID MATERIAL IN INTEGRATED CIRCUITS
摘要 <p>The invention relates to the fields of microelectronics and materials sciences and concerns an insulation layer material for integrated circuits in microelectronics, which can be used, for example, in integrated circuits as insulation material in semiconductor components. The object of the present invention is to disclose an insulation material for integrated circuits, which has dielectric constants of k≰2 with good mechanical properties at the same time. The object is attained with an insulation material for integrated circuits, containing at least MOFs and/or COFs.</p>
申请公布号 EP2399282(B1) 申请公布日期 2014.04.09
申请号 EP20100704527 申请日期 2010.02.03
申请人 LEIBNIZ-INSTITUT FUER FESTKOERPER- UND WERKSTOFFFORSCHUNG DRESDEN E.V. 发明人 SEIFERT, GOTTHART;HERMANN, HELMUT;ZAGORODNIY, KONSTYANTYN;ZSCHECH, EHRENFRIED
分类号 H01L21/312;C07F3/00;C07F5/00;C07F5/06 主分类号 H01L21/312
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