发明名称 Method for metal-free synthesis of epitaxial semiconductor nanowires on si
摘要 The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.
申请公布号 US8691011(B2) 申请公布日期 2014.04.08
申请号 US20070224822 申请日期 2007.03.07
申请人 SAMUELSON LARS;MAARTENSSON THOMAS;SEIFERT WERNER;MIKKELSEN ANDERS;MANDL BERNHARD;QUNANO AB 发明人 SAMUELSON LARS;MAARTENSSON THOMAS;SEIFERT WERNER;MIKKELSEN ANDERS;MANDL BERNHARD
分类号 C30B23/00 主分类号 C30B23/00
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