| 摘要 |
A method of making a compound semiconductor substrate includes providing a GaN compound semiconductor single crystal ingot, and cutting the ingot with a cutter to form a GaN single crystal substrate. The cutting is performed while controlling a temperature in a contact portion between the ingot and the cutter to be not more than 160° C. such that a cut surface of the GaN single crystal substrate has an arithmetical mean waviness (Wa) not more than 9μm. |
