| 摘要 |
Provided is ITO powder having a surface thereof modified, which has high conductivity when made into compact at low pressure. The ITO powder having the surface thereof modified according to the present invention has a resistivity of 0.50 OMEGA.cm or less when pressure of 0.98 MPa is exerted on a compact composed of the ITO powder. When a pressure of 0.196 to 29.42 MPa is exerted on the compact, the relation between pressure and volume resistivity approximates to Y = aX^n wherein Y represents the volume resistivity of the compact, X represents the pressure, a is less than or equal to 5.00, and n is less than or equal to -0.500. [Reference numerals] (AA) Volume resistivity [廓 c m]; (BB) Example 1; (CC) Example 2; (DD) Example 3; (EE) Comparative example 1; (FF) Pressure [MP a] |
