TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND ELECTRONIC DEVICE COMPRISING TRANSISTOR

摘要

Disclosed are a transistor, a method for manufacturing the same, and an electronic device comprising the transistor. The transistor can include a gate electrode formed on a substrate; a gate insulating layer formed in the upper part of the gate electrode and includes zirconium oxide (ZrO_2); a channel layer formed on the gate insulating layer; a source electrode connected to the first region of the channel layer; and a drain electrode connected to the second region of the channel layer.