| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer processing method capable of improving productivity without the time required to remove a protective film after irradiating a wafer with a laser beam.SOLUTION: A wafer processing method comprises the steps of: forming a protective film P on a surface WS of a wafer W; performing ablation processing by irradiating the wafer with a laser beam along a division schedule line from the protective film P side after performing the protective film formation step (laser beam irradiation step); and sticking an adhesive tape for peeling to the whole surface of the protective film P and peeling the protective film P from the surface WS of the wafer W together with the adhesive tape after performing the laser beam irradiation step (peeling step). The protective film formation step applies a mixed resin J in which a powder having absorptivity to a wavelength of a laser beam is mixed in the resin which hardens by irradiating it with ultraviolet light V to the surface WS of the wafer W. The step then forms the protective film P on the surface WS of the wafer W by irradiating the mixed resin J with the ultraviolet light V. |
