发明名称 SPACER FORMATION IN A SOLAR CELL USING OXYGEN ION IMPLANTATION
摘要 A solar cell is disclosed. The solar cell has a front side facing the sun during normal operation, and a back side facing away from the sun. The solar cell comprises a silicon substrate, a first polysilicon layer with a region of doped polysilicon on the back side of the substrate. The solar cell also comprises a second polysilicon layer with a second region of doped polysilicon on the back side of the silicon substrate. The second polysilicon layer at least partially covers the region of doped polysilicon. The solar cell also comprises a resistive region disposed in the first polysilicon layer. The resistive region extends from an edge of the second region of doped polysilicon. The resistive region can be formed by ion implantation of oxygen into the first polysilicon layer.
申请公布号 US2014090701(A1) 申请公布日期 2014.04.03
申请号 US201213631457 申请日期 2012.09.28
申请人 SUNPOWER CORPORATION 发明人 RIM SEUNG;SMITH DAVID D.
分类号 H01L31/0352 主分类号 H01L31/0352
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