| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a low temperature polysilicon film which allows for elongation of the grain growth direction in a desired direction depending on the direction of movement of carriers, even if the planar shape of a channel region is complicated, and allows for formation of a channel region of high speed operation at an arbitrary position, and to provide a method of manufacturing a thin film transistor.SOLUTION: On an insulator film formed on a substrate 1, amorphous silicon films 3a, 3b are patterned in a predetermined channel shape. Subsequently, in a region 4 including the amorphous silicon films 3a, 3b, the amorphous silicon films 3a, 3b are irradiated with laser light and fused temporarily, before being solidified. Solidification of a fusion part is started from the edge of a channel region, and a polysilicon film having a grain boundary extending from the edge toward the central part is formed. When forming a source-drain electrode, and the like, by using the polysilicon film as a channel region, a transistor of high speed operation having a high carrier mobility can be obtained. |
