| 摘要 |
The semiconductor device according to the present invention comprises a plurality of actually operative capacitors formed, arranged in an actually operative capacitor part over a semiconductor substrate and each including a lower electrode, a ferroelectric film and an upper electrode; a plurality of dummy capacitors formed, arranged in a dummy capacitor part provided outside of the actually operative capacitor part over the semiconductor substrate and each including the lower electrode, the ferroelectric film and the upper electrode; a plurality of interconnections respectively formed on said plurality of the actually operative capacitors and respectively connected to the upper electrodes of said plurality of the actually operative capacitors; and the interconnections respectively formed on said plurality of the dummy capacitors. |
