发明名称 VARIABLE DENSITY IMPLANT AND METHOD
摘要 An implant can comprise a porous region (12) including a plurality of interconnecting interstitial cells configured to receive bone or biological tissue ingrowth. The porous region can be formed of a first portion (14), including a first plurality of the interconnecting interstitial cells and having a first density, and a second portion (16), including a second plurality of the interconnecting interstitial cells and having a second density different than the first density. The plurality of interconnecting interstitial cells can form a framework onto which a material can be disposed in different amounts to provide the first and second densities of the first and second portions, respectively. The second density can be selected and configured to provide greater bone or biological tissue ingrowth than the first density. The first and second density can be selected and configured to substantially match an anisotropic property of a body component the implant is intended to replace or augment. The differing densities are achieved by controlling a vapor deposition rate of a material on the different portions. Particularly described is chemical vapor deposition.
申请公布号 WO2014052187(A1) 申请公布日期 2014.04.03
申请号 WO2013US60884 申请日期 2013.09.20
申请人 ZUBOK, RAY;DHARIA, MEHUL;VARGAS, JOSEPH R.;SEELMAN, STEVEN;HOEMAN, TIMOTHY A. 发明人 ZUBOK, RAY;DHARIA, MEHUL;VARGAS, JOSEPH R.;SEELMAN, STEVEN;HOEMAN, TIMOTHY A.
分类号 A61F2/30 主分类号 A61F2/30
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