NON-PLANAR SEMICONDUCTOR DEVICE HAVING CHANNEL REGION WITH LOW BAND-GAP CLADDING LAYER
摘要
Non-planar semiconductor devices having channel regions with low band-gap cladding layers are described. For example, a semiconductor device includes a vertical arrangement of a plurality of nanowires disposed above a substrate. Each nanowire includes an inner region having a first band gap and an outer cladding layer surrounding the inner region. The cladding layer has a second, lower band gap. A gate stack is disposed on and completely surrounds the channel region of each of the nanowires. The gate stack includes a gate dielectric layer disposed on and surrounding the cladding layer and a gate electrode disposed on the gate dielectric layer. Source and drain regions are disposed on either side of the channel regions of the nanowires.
申请公布号
WO2014051731(A1)
申请公布日期
2014.04.03
申请号
WO2013US45238
申请日期
2013.06.11
申请人
INTEL CORPORATION
发明人
RADOSAVLJEVIC, MARKO;DEWEY, GILBERT;CHU-KUNG, BENJAMIN;BASU, DIPANJAN;GARDNER, SANAZ K.;SURI, SATYARTH;PILLARISETTY, RAVI;MUKHERJEE, NILOY;THEN, HAN WUI;CHAU, ROBERT S.