VOLATILE MEMORY DEVICE AND MEMORY CONTROLLER

摘要

According to the technical idea of the present invention, provided is a volatile memory device. The volatile memory device includes a memory cell array storing data, a command decoder, a self refresh circuit unit, and a register. The command decoder decodes a self refresh entry command, a self refresh escape command, and a register read command from external command signals. The self refresh circuit unit internally refreshes the memory cell array until the self refresh escape command is received in response to the self refresh entry command. The register stores the accessible state of the memory cell array in response to the self refresh escape command. The accessible state of the memory cell array stored in the register is outputted in response to the register read command.