| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem of variation in threshold value and mobility of a transistor because of a number of factors such as variation in a gate insulation film caused by a difference between manufacturing processes and a difference between using substrates, and variation in a crystalline state of a channel formation region.SOLUTION: In the present embodiment, an electric circuit arranged in a manner such that both electrodes of a capacitive element can maintain a gate-source voltage of a specific transistor is provided. In addition in the present embodiment, an electric circuit having a function of enabling setting of potential between both electrodes of a capacitive element by using a constant current source is provided. |
