| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving resistance of an element.SOLUTION: A semiconductor device includes: a first semiconductor layer; a second semiconductor layer; a third semiconductor layer having a structure in which first semiconductor regions and second semiconductor regions are alternately arranged along a first direction perpendicular to the stacking direction of the first semiconductor layer and the second semiconductor layer; a fourth semiconductor layer having a structure in which third semiconductor regions and fourth semiconductor regions are alternately arranged along the first direction; and a fifth semiconductor layer provided on the third semiconductor regions and the fourth semiconductor regions. The concentration of an impurity element contained in the second semiconductor regions is higher than the concentration of an impurity element contained in the first semiconductor regions. The concentration of an impurity element contained in the third semiconductor regions is higher than the concentration of an impurity element contained in the fourth semiconductor regions. The first length between the interface between the third semiconductor layer and the fourth semiconductor layer and a lower end of the fifth semiconductor layer is longer than the second length between the interface and an upper end of the second semiconductor layer. |
