| 摘要 |
It is possible to realize a piezoelectric device capable of avoiding occurrence of defects due to pyroelectric charge without limitations on the types of device in which the piezoelectric device can be used. A metal layer is formed on the bonding surface of a piezoelectric single crystal substrate (S121). Furthermore, a metal layer is formed on the bonding surface of a support substrate (S122). The metal layers are overlaid on each other to form a metal bonded layer (S123). Subsequently, by oxidizing the metal bonded layer, a semi-conducting layer is formed (S126). |
