| 摘要 |
A CVD apparatus (1) is provided with: a plurality of deposition chamber units (6) which each comprise a deposition roller (2, 2) connected to a plasma power source and a unit chamber for deposition (60) housing the deposition roller (2, 2), and are disposed such that the deposition rollers (2, 2) form a line in a horizontal direction; and a connection chamber unit (7) which comprises a unit chamber for connection (70) coupled to the unit chamber for deposition (60) of the deposition chamber unit (6) and interposed between the adjacent deposition chamber units (6) to connect the deposition chamber units (6). A substrate (W) is transferred while being rolled around the respective deposition rollers (2, 2) of the respective deposition chamber units (6), and the deposition chamber units (6) decompose source gas by plasma generated near the deposition rollers (2, 2) by application of voltage to the deposition rollers (2, 2) to perform deposition processing on the substrate on the deposition rollers (2, 2). |
