发明名称 Transfer substrate for forming metal wiring and method for forming metal wiring using the transfer substrate
摘要 <p>The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 µm to 1.0 µm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300°C.</p>
申请公布号 KR101380002(B1) 申请公布日期 2014.04.02
申请号 KR20137013880 申请日期 2011.11.18
申请人 发明人
分类号 H01L21/28;H01L21/60 主分类号 H01L21/28
代理机构 代理人
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