发明名称 |
Magnetic memory element and magnetic random access memory |
摘要 |
A magnetic memory cell includes: a magnetization recording layer; and a magnetic tunneling junction section. The magnetization recording layer includes a ferromagnetic layer with perpendicular magnetic anisotropy. The magnetic tunneling junction section is used for reading information in the magnetization recording layer. The magnetization recording layer includes two domain wall moving areas. |
申请公布号 |
US8687414(B2) |
申请公布日期 |
2014.04.01 |
申请号 |
US200913139607 |
申请日期 |
2009.12.24 |
申请人 |
NAGAHARA KIYOKAZU;FUKAMI SHUNSUKE;ISHIWATA NOBUYUKI;SUZUKI TETSUHIRO;OHSHIMA NORIKAZU;NEC CORPORATION |
发明人 |
NAGAHARA KIYOKAZU;FUKAMI SHUNSUKE;ISHIWATA NOBUYUKI;SUZUKI TETSUHIRO;OHSHIMA NORIKAZU |
分类号 |
G11C11/14 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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